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Ataque químico húmedo de nitruro de galio (GaN) asistido por láser

Resumen

Tipo:
Oferta Tecnológica
Referencia:
TOSG20180105001
Publicado:
15/01/2018
Caducidad:
15/01/2019
Resumen:
Un centro de investigación singapurense ha desarrollado una técnica de ataque químico húmedo de nitruro de galio (GaN) asistido por láser. Esta técnica ofrece numerosas ventajas en comparación con la tecnología tradicional de ataque por plasma y puede emplearse en la fabricación de LEDs verticales. La tecnología evita el uso de máscaras y, por lo tanto, la necesidad de un proceso de litografía. El uso de láser en el proceso aumenta la velocidad del ataque y permite la creación de una zanja vertical limpia y profunda desde la superficie de la oblea de GaN hasta el sustrato de zafiro. Industrias como fabricantes de semiconductores, mecánica y electrónica flexible pueden aprovechar las ventajas competitivas de esta técnica. El centro de investigación busca pymes y multinacionales con el fin de establecer acuerdos de licencia.

Details

Tittle:
Laser-assisted wet chemical etching of gallium nitride (GaN).
Summary:
A Singapore research institution has developed a laser assisted wet chemical etching of gallium nitride (GaN). This technique offers many benefits compared to the traditional plasma etching technique. It can be used for the fabrication of vertical LEDs. Industries such as semiconductor fabrication, mechanical, and flexible electronics can leverage the competitive benefits of this technique.

The institution is keen to partner SMEs and MNEs through a licensing model.
Description:
Inductive coupled plasma (ICP) dry etching using Chlorine (Cl2) and Boron trichloride (BCl3) gas, is one of the processes that is traditionally employed for etching GaN. However, there are certain drawbacks. The lithography resist with thickness as high as 10um may be burnt or becomes difficult to be removed.

The Singapore research institution has developed a novel wet chemical etching technique of GaN using laser. The new technique eliminates the need for masks, thus there is no need for a lithography process. Using laser for the etching process increases the etching speed and enables creation of a clean deep vertical trench from the GaN wafer surface down to the sapphire substrate.

With the proposed laser assisted chemical etching technique, the GaN trench can be etched thoroughly with K2S2O8 (Potassium persulfate) solution which is not possible with the traditional etching process.

Using the novel etching process, the research institution is keen to establish partnerships with industry players (SMEs of all sizes or MNEs e.g. semiconductor technologies provider) through a licensing agreement.
Advantages and Innovations:
1. The proposed laser-assisted chemical etching technique, 355nm diode-pumped solid-state (DPSS) laser is used to improve etching speed and leads to fabrication of clean deep vertical trench.
2. Other competitive advantages include - elimination of lithography process (as it is maskless) and leveraging K2S2O8 for etching GaN.
3. Potential applications include:
· Use in semiconductor industry for LED chip fabrication and packaging of Integrated Circuit (IC) chip (IC chip dicing process).
· It can also be used in the mechanical industry for precision laser micromachining, mechanical part machining, plastic injection moulding fabrication, ceramic and glass micromachining (AlN ceramics micromachining).
· It can be beneficial in design and pattern formation in flexible electronics application.
Stage of Development:
Available for demonstration
IPs:
Granted patent or patent application essential
CommeR Statunts Regarding IPR Status:
Patent is granted for Singapore.

Partner sought

Type and Role of Partner Sought:
The Singapore institution seeks to work with SMEs or MNEs in the semiconductor industry based on a licensing agreement partnership.

The partner sought could be a LED manufacturer, LED chip fabrication and IC chip packaging OEMs, micromachining and flexible electronics manufacturers.

Under a licensing agreement:
- The partner can license the technology to offer as a product or service to their customers.

Client

Type and Size of Client:
R&D Institution
Already Engaged in Trans-National Cooperation:
Si
Languages Spoken:
English

Keywords

Technology Keywords:
01002003 Electronic engineering
01002001 Micro and Nanotechnology related to Electronics and Microelectronics
01002007 Nanotechnologies related to electronics & microelectronics
01002012 Semiconductores