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Cámara de metrología pequeña para análisis por rayos X en oblea de 450 mm
Resumen
Tipo:
Oferta Tecnológica
Referencia:
TODE20141002001
Publicado:
08/10/2015
Caducidad:
06/04/2016
Resumen:
Un instituto de investigación alemán ha desarrollado una solución que supera los problemas causados por la introducción de la tecnología de fabricación de obleas de 450 mm y reducción del tamaño de dimensión crítica. Debido a estos desarrollos, ha aumentado la demanda de métodos de análisis de rayos X. Por ello el instituto ha desarrollado una cámara de metrología para caracterizar obleas de 450 mm. La tecnología permite realizar ajustes en la orientación del cristal en cualquier punto arbitrario de la oblea. La tecnología se caracteriza por ser altamente fiable y reproducible. El instituto busca licenciatarios.
Details
Tittle:
Small metrology chamber for 450mm Wafer-X-ray analytics
Summary:
A German research institute has developed a solution which overcomes problems caused by the introduction of the 450 mm technology in the wafer production and downsizing of critical dimension. Due to these developments the demand for improved x-ray analysis methods increased. The offered metrology chamber for the characterisation of 450 mm wafers was therefore developed. The core part is a patented multi-axis manipulator. The research institute is searching for licensees.
Description:
The German research institute developed a solution which is necessary to proceed a broad range of X-ray methods integrated in on single chamber which enables the identification of analytical artefacts and essential depth information. The demand for such solution increased due to the transfer of modern production procedures on large scale wafers which exceeds brings current analytical methods capabilities.
The offered invention enables, due to the spatial stacking of translatoric, rotatoric and goniometric movement components, the integration of several x-ray methods in the lowest possible volume. The crystal-orientation s of the silicon crystal at every arbitrarily point of the wafer can be adjusted simultaneously. A complete x-y-z scan is possible in a yet unachieved small chamber. The manipulator enables movements of the wafer.
The following analysis methods are possible with manipulator:
- total reflection x-ray fluorescence (TXRF)
- grazing-incidence x-ray fluorescence (GIXRF)
- x-ray fluorescence (XRF)
- X-ray reflectometry (XRR)
- X-ray diffraction (XRD)
- grazing-incidence small-angle scattering (GISAXS)
- ellipsometry
- VUV reflectometry
The economical meaning of the offered technology is considered to be high, as metrology is yet in an early state of the value chain in the processing of new materials into new products. X-ray analytics are compulsory in the quality analysis during wafer production processes.
The offered invention enables, due to the spatial stacking of translatoric, rotatoric and goniometric movement components, the integration of several x-ray methods in the lowest possible volume. The crystal-orientation s of the silicon crystal at every arbitrarily point of the wafer can be adjusted simultaneously. A complete x-y-z scan is possible in a yet unachieved small chamber. The manipulator enables movements of the wafer.
The following analysis methods are possible with manipulator:
- total reflection x-ray fluorescence (TXRF)
- grazing-incidence x-ray fluorescence (GIXRF)
- x-ray fluorescence (XRF)
- X-ray reflectometry (XRR)
- X-ray diffraction (XRD)
- grazing-incidence small-angle scattering (GISAXS)
- ellipsometry
- VUV reflectometry
The economical meaning of the offered technology is considered to be high, as metrology is yet in an early state of the value chain in the processing of new materials into new products. X-ray analytics are compulsory in the quality analysis during wafer production processes.
Advantages and Innovations:
The offered technology has the following advantages:
- widespread 450 mm wafer characterisation in one device
- two dimensional scanning in a footprint of 1 m2
- adjustments of the crystal-orientation s of the silicon crystal at every arbitrarily point of the wafer
- highest reliability and reproducibility
- widespread 450 mm wafer characterisation in one device
- two dimensional scanning in a footprint of 1 m2
- adjustments of the crystal-orientation s of the silicon crystal at every arbitrarily point of the wafer
- highest reliability and reproducibility
Stage of Development:
Field tested/evaluated
IPs:
Patent(s) applied for but not yet granted
Partner sought
Type and Role of Partner Sought:
- Type of partner sought: industry
- Specific area of activity of the partner: Development and production of wafers or equipment for the wafer production
- Task to be performed by the partner sought:
Use the offered technology as licensee.
- Specific area of activity of the partner: Development and production of wafers or equipment for the wafer production
- Task to be performed by the partner sought:
Use the offered technology as licensee.
Client
Type and Size of Client:
R&D Institution
Already Engaged in Trans-National Cooperation:
Si
Languages Spoken:
English
German
German
Keywords
Technology Keywords:
01002007 Nanotechnologies related to electronics & microelectronics
09001008 Otros ensayos no destructivos
01002012 Semiconductores
09001008 Otros ensayos no destructivos
01002012 Semiconductores
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