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Instalación de vacío multifuncional para grabado por ión-plasma

Resumen

Tipo:
Oferta Tecnológica
Referencia:
11 RU 86FG 3L0T
Publicado:
23/06/2015
Caducidad:
30/12/2015
Resumen:
Un centro de I+D ruso ha desarrollado una instalación con un reactor de plasma helicón-magnetrón de doble descarga para grabado de materiales empleados en micro- y nano-electrónica. La instalación ofrece un grabado plasma-químico altamente selectivo y grabado por iones de perfil alto en un ciclo común gracias a la gestión independiente de flujos de iones y a la concentración de radicales reactivos. El centro busca socios para llevar a cabo actividades conjuntas de investigación y adaptar la instalación a problemas tecnológicos específicos.

Details

Tittle:
Multifunctional vacuum installation for ion-plasma etching
Summary:
An R&D institute from Moscow developed an installation with a double discharge helicon-magnetron plasma reactor for etching materials used in micro-and nanoelectronics.
The installation provides high-selective plasmachemical etching and high-aspected ion etching in a common cycle, due to independent management of ion flows and concentration of reactive radicals.
The institute is looking for partners for joint research and adaptation to specific technological problems.
Description:
The installation ensures the characteristics of semiconductor structures etching required for micro&nanoelectronic and micromechanical productions.
The key features of the installation are:
- extremely high density of plasma in the helicon discharge, which results in an increased etching rate;
- ability to control the ion energy toward smaller values through changing the magnetic field induction in the zone of high-frequency magnetron discharge, in order to increase the selectivity of the etching process;
- maximum diameter of processed substrate is 400-450 mm, without plasma flow scanning against the substrate.


Current and Potential Domain of Application: Precision size processing of materials for the needs of silicone technology of micro-and nanoelectronics.
Precision etching of plates of increased diameter (450 mm) without scanning the plate or the plasma flow.
Current and Potential Domain of Application
Precision size processing of materials for the needs of silicone technology of micro-and nanoelectronics.
Precision etching of plates of increased diameter (450 mm) without scanning the plate or the plasma flow.
Advantages and Innovations:

In the existing systems, transition from one process to another requires changing the plasma source. The proposed technology enables to proceed from one process to another using the same source, only by changing the operating modes of the discharge system through a wide range of independent control of energy and of ion density flow.
This technology essentially reduces the cost of equipment and allows to integrate a number of processes without moving the processed plate.
The plasma reactor of the installation includes a helicon and a high-frequency magnetron sources of plasma. The reactor architecture enables to do the processes of plasma-chemical and reactive-ion etching with a high uniformity at the plates with a 400-450 mm diameter without mutual scanning of the plasma flow and the wafer.
Stage of Development:
Under development/lab tested
IPs:
Patent(s) applied for but not yet granted
CommeR Statunts Regarding IPR Status:
RF patent application 2010,
Ukraine patent application 2010.

Partner sought

Type and Role of Partner Sought:
- Type of partner sought:Industry, R&D in micro and nano-electronics, radio electronics
- Specific area of activity of the partner: A developer of manufacturing processes of materials and layers plasma etching in the production of micro / nano electronics; a producer of industrial, research equipment in the field of materials and layers plasma etching.
- Task to be performed by the partner sought:
1. Joint technology testing and adaptation to the specific technological problem. Or
2. Collaborations to develop the process using the installation to solve a specific production problem, associated with precision etching of plates with up to 450mm size
Type of Partnership Considered:
Adaptation to specific needs
Assembly
Engineering
Joint further development
License Agreement
Maintenance
Technical consultancy
Testing of new applications

Client

Type and Size of Client:
University
Already Engaged in Trans-National Cooperation:
No