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Interruptor para entornos con alta radiación

Resumen

Tipo:
Oferta Tecnológica
Referencia:
TOES20161215002
Publicado:
30/12/2016
Caducidad:
30/12/2017
Resumen:
Investigadores españoles han desarrollado un interruptor de silicio especialmente indicado para entornos con un alto nivel de radiación. Gracias a su configuración específica, este dispositivo presenta una alta resistencia a daños ionizantes. La tecnología se aplica principalmente en reactores espaciales y nucleares, así como en aeronaves que vuelan a grandes alturas y equipos o componentes electrónicos sometidos a altas radiaciones. El grupo de investigación busca socios de la industria de electrónica especializados en detección de radiación para colaborar mediante acuerdos de licencia de patente.

Details

Tittle:
Power Switch suitable in high radiation environments
Summary:
Spanish reseearchers have developed a silicon-based power switch which is very suitable to be used in high-radiation level
environments. Due to its particular configuration the device presents very high radiation hardness.
Industrial partners from the electronic industry focused on radiation detection are being sought to collaborate through a patent licence agreement.
Description:
There are many environments where there are elevated levels of radiation these includes on one hand, regions of high natural background radiation such as the Space environment, high-flying aircraft, some particular regions on the Earth; and on the other hand places where the radiation is not natural such as nuclear reactors, particle accelerators, commercial irradiators, or radiation emitted from a nuclear explosion.
One of the power electronics concerns nowadays is the search for proper circuits and devices for the power distribution in systems to be operated in harsh radiation environments like the before mentioned.
An electronic device that is mandatory in the power distribution circuits is the power switch. Many of the state-of-the-art power switches used in standard application fields are not valid for radiation harsh applications as they fail under radiation exposure.
In this way, a Junction Field-Effect Transistor and silicon-based device has been developed as a radiation-hard power switch in power distribution applications. Its particular configuration makes it robust to ionizing and nonionizing damage and very suitable to be implemented in environment with
high radiation.
Advantages and Innovations:
Its main application are in Space and nuclear reactors, however can be also used in high-flying aircraft, particles accelerator, or any electronic equipment or component that suffers high radiation.

Main Advantages:
- Device robust to ionizing and non-ionizing damage
- Good current capability
- Uniform voltage distribution over the device and very control of channel depletion.
- High drift region which increases the breakdown voltage of the device.
Stage of Development:
Available for demonstration
IPs:
Patent(s) applied for but not yet granted
CommeR Statunts Regarding IPR Status:
Priority patent application filed suitable for international extension

Partner sought

Type and Role of Partner Sought:
Industrial partners from the electronic industry focused on radiation detection are being sought to collaborate through a patent licence agreement.

Client

Type and Size of Client:
R&D Institution
Already Engaged in Trans-National Cooperation:
No
Languages Spoken:
English
German

Keywords

Technology Keywords:
01002001 Micro and Nanotechnology related to Electronics and Microelectronics
10001005 Protección contra la radiación
01002012 Semiconductores
01001002 Sistemas digitales, representación digital