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LEDs de silicio altamente eficientes

Resumen

Tipo:
Oferta Tecnológica
Referencia:
TOTR20161031006
Publicado:
11/11/2016
Caducidad:
11/11/2017
Resumen:
Un investigador turco ha desarrollado un nuevo proceso de fabricación de diodos electroluminiscentes de silicio (LED) sobre superficies muy grandes en el orden de metros, a temperaturas mucho más bajas y aplicando corriente eléctrica en vez de tratamientos en hornos. Se trata de un proceso de bajo coste cuya temperatura de producción es de 250 ºC y el número de LEDs fabricados se limita por las dimensiones del reactor. A pesar de sus costes bajos de producción, los LEDs se encuentran entre los más eficientes hasta la fecha. Su fabricación es sencilla, rápida y reproducible gracias al uso del sistema PECVD. El investigador busca fabricantes de LEDs con el fin de establecer acuerdos de licencia.


Details

Tittle:
High efficiency silicon LEDs
Summary:
A Turkish researcher has invented a new process for fabricating silicon electroluminescent diodes (LED). The process renders the fabrication of LEDs over very large surfaces in the order of metres, at much lower temperatures, raised by applying electric current and not by furnace treatments. The resarcher is interested in a license agreement with LED manufacturers.
Description:
This new technology, provides production of efficient and low-cost silicons. Although LEDs in the market are very efficient, their fabrication processes are grueling and expensive. Moreover, due to their incompatibility with the Silicon processing technology they are integrated into display units using hybrid techniques, which leads to undesirable effects in performance and efficiency. Considering also the instability problems of OLEDs, our invention shines as it is low-cost with feasible dimensions, Silicon-based, stable and efficient.

Three Silicon based layers of suitable properties are deposited on Cr-coated glass. Indium-Tin-Oxide (ITO) is coated as the optical window. After the production is over, electroforming process is utilized under a calibrated forward bias. The light emission efficiency of the diode is enhanced by at least 30 times after this process. The color of the light can be adjusted by the deposition parameters of the Silicon layers.

The resarcher is looking for license agreement.
Advantages and Innovations:
Using the current diode fabrication methods, the production of macroscale LEDs is almost impossible by means of the furnace annealing processes and other costs.

Compared to existing techniques, main advantages can be specified as;

- Silicon-based: Driver circuitry and the light sources of optoelectronic devices are ready in a single

-Low-cost: Production temperature is 250 °C. Number of LEDs to be produced is limited by the reactor dimensions.

-Efficient: Despite its low-cost production, it is among the highest efficiency Silicon LEDs reported so far.

-Multi-color: LEDs can be produced to emit light in any desired color including Infrared, visible, ultraviolet regions.

-Easy to produce: Quick and reproducible fabrication using PECVD system.
Stage of Development:
Prototype available for demonstration
IPs:
Granted patent or patent application essential
CommeR Statunts Regarding IPR Status:
USA, Holland, Germany, Turkey patent were granted
S. Korea is pending

Partner sought

Type and Role of Partner Sought:
The researcher is looking for potential clients who will be interested in licencing the technology.

Client

Type and Size of Client:
University
Already Engaged in Trans-National Cooperation:
No
Languages Spoken:
English

Keywords

Technology Keywords:
01002003 Electronic engineering
01002001 Micro and Nanotechnology related to Electronics and Microelectronics
01002007 Nanotechnologies related to electronics & microelectronics
01002008 Optical Networks and Systems