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Método de fabricación de transistores con alta movilidad de electrones

Resumen

Tipo:
Oferta Tecnológica
Referencia:
TOSK20140701001
Publicado:
13/07/2015
Caducidad:
12/01/2016
Resumen:
Un instituto de investigación eslovaco del sector de electrotecnia ha desarrollado un nuevo método para fabricar transistores con alta movilidad de electrones. Los transistores pueden emplearse en la fabricación de piezas electrotécnicas extremadamente rápidas. El transistor incluye una capa de InN para aumentar su velocidad. La velocidad de los electrones es 4 veces mayor que la de los electrones de materiales de silicio empleados en la actualidad. Se buscan socios con el fin de establecer acuerdos de licencia o comercialización con asistencia técnica.

Details

Tittle:
Method for production of transistors with high electron mobility
Summary:
One of the Slovak research institutes engaged in the electrotechnics sector has developed a novel method for production of transistors with high electron mobility. Transistors can be used for production of extremely fast electrotechnical parts. The Institute is looking for license agreement or commercial agreement with technical assistance.
Description:
Technical solution is related to the field of electrical engineering, namely the production of transistors with high electron mobility (HEMT). Current trends in the semiconductor industry are associated primarily with the miniaturization of transistors in order to increase the switching speed and degree of integration components. Shortening the length of the silicon transistor has already reached its physical limits and it is therefore necessary to look for alternative solutions.
Enrichment III-N transistor consists of the following layers:
- Lower barrier coating,
- Channel layer,
- Upper barrier cassettes whose chemical composition is different from that of the bottom barrier layer and
- Isolation of the gate dielectric, the top barrier layer interface/channel layer has a negative polarization charge whose absolute value is greater than a positive polarization charge at the interface of the channel layer/backing layer.

Described transistor includes a channel layer based on InN, which increases its speed.
The drift velocity of electrons is about 4 times greater than the speed of electrons in silicon materials nowadays used.
Advantages and Innovations:
The method for production of transistors with high electron mobility has many advantages over the previously used methods.
Technology of transistors is designed to be able to prepare two types of transistors (enrichment and enpoorment) on one substrate. This allows the monolithic integration. Growth is carried out on the prepared Galium-Nitrid layer with Nitrid orientation.
The drift velocity of electrons is about 4 times greater than the speed of electrons in silicon materials nowadays used.
Stage of Development:
Under development/lab tested
IPs:
Granted patent or patent application essential
CommeR Statunts Regarding IPR Status:
PP 67-2013

Partner sought

Type and Role of Partner Sought:
Industrial partners for further development of used method.

Client

Type and Size of Client:
R&D Institution
Already Engaged in Trans-National Cooperation:
Si
Languages Spoken:
English
Slovak

Keywords

Technology Keywords:
01001001 Automatización, sistemas robóticos de control
01001002 Sistemas digitales, representación digital