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Novel ion implantation technology based on a specific energy filter for the production of semiconductor micro-chips for devices and wafers made of silicon carbide (SiC)

Resumen

Tipo:
Oferta Tecnológica
Referencia:
TODE20200820001
Publicado:
07/09/2020
Caducidad:
08/09/2021
Resumen:
A German high-tech SME with focus on micro-engineering tools for processing semiconductors developed a novel high-energy ion implantation technology, based on energy filter for ion implantation (EFII), enable very precise, depth-distributed doping of any desired semiconductor material (e.g. SiC). Seeking companies from semiconductor sector and foundries using ion implantation or producing ion beam accelerators, for technical cooperation and commercial agreements with technical assistance.

Details

Tittle:
Novel ion implantation technology based on a specific energy filter for the production of semiconductor micro-chips for devices and wafers made of silicon carbide (SiC)
Summary:
A German high-tech SME with focus on micro-engineering tools for processing semiconductors developed a novel high-energy ion implantation technology, based on energy filter for ion implantation (EFII), enable very precise, depth-distributed doping of any desired semiconductor material (e.g. SiC). Seeking companies from semiconductor sector and foundries using ion implantation or producing ion beam accelerators, for technical cooperation and commercial agreements with technical assistance.
Description:
Microelectronic power devices based on the semiconductor material silicon carbide (SiC) have superior properties compared to devices made of Silicon (Si). One of the key processes during the production of any SiC power device is the doping of the active epitaxial layer. Unfortunately, today´s microchip production cannot fully exploit the advantages of SiC, since the doping variance of the active layer is rather high (more than 10% doping variation for N (nitrogen) in SiC over a 6" wafer is common). This directly translates into negative device performance and higher chip cost. Until recently, no technical solutions to overcome this problem were known, that are scalable to production volume.

However, a German start-up high-tech company with focus on micro-engineering tools for processing semiconductors has recently developed a novel high-energy ion implantation technology. This technology is based on an energy filter for ion implantation (EFII), which allows for very precise, depth-distributed doping of any desired semiconductor material.

The EFII technology overcomes the mentioned problems in semiconductor processing in a scalable manner. It especially offers a highly-precise, flexible solution for the doping problem in SiC; less than 3% doping variation for N (nitrogen) in SiC over a 6" wafer).

The EFII technology is offered to semiconductor power device manufacturer which are in particular, but not exclusively dealing with silicon carbide (SiC) high-voltage diodes, MOSFETs (metal oxide semiconductor field-effect transistors) and superjunction devices and also to SiC substrate suppliers. Furthermore EFII is offered to high-energy ion implantation foundries, ion beam accelerator manufacturers and end-station manufacturers. For all target groups technical cooperation agreements and/or commercial agreements with technical assistance are envisaged.

Advantages and Innovations:
- Enabling cost savings and increases of performance by 20% and more
- Any desired dopant-substrate-combination possible
- High lateral dopant homogeneity (<3%) over the wafer surface
- Highest doping precision
- Exact energy filter manufacturing with low surface roughness leads to exact profile shaping.
- For flexible adjustment of electrical features of SiC power devices
- By utilization of a multi-wafer-implanter high wafer throughput possible
- Only evident technology scalable to production volume
- Enables high-performance chip products which are not yet feasible
- Enable more accurate and cost-efficient devices
- Improves significantly the cost and market position of customers
Stage of Development:
Already on the market
IPs:
Granted patent or patent application essential
CommeR Statunts Regarding IPR Status:
Several granted patents for D and EU

Partner sought

Type and Role of Partner Sought:
Industrial companies of all sizes from semiconductor sector (especially SiC based) are sought for technical cooperation and/or commercial agreements with technical assistance.

Role of partners sought:
- Power device manufacturers: Interested customers and companies should test and use the novel ion implantation technology in own process steps for the production of microchips (e.g. SiC high-voltage diodes, MOSFETs and superjunction devices) with significantly improved efficiency
- Substrate suppliers: Interested customers can dope the epitaxial layers on their substrates with a high lateral doping homogeneity of <1% (e.g. for N or Al in SiC).
- High-energy ion implantation foundries, ion beam accelerator manufacturers and end-station manufacturers can implement the novel ion implantation technology for their customers.

Client

Type and Size of Client:
Industry SME <= 10
Already Engaged in Trans-National Cooperation:
Si
Languages Spoken:
English
German

Keywords

Technology Keywords:
01002001 Micro and Nanotechnology related to Electronics and Microelectronics
05005 Micro y nanotecnología
02002016 Microingeniería y nanoingeniería
02002017 Micromecanizado, nanomecanizado
01002012 Semiconductores