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Proceso de delaminación de bajo coste para aislar grafeno de alta calidad

Resumen

Tipo:
Oferta Tecnológica
Referencia:
TOES20190110002
Publicado:
01/02/2019
Caducidad:
02/02/2020
Resumen:
Investigadores españoles han desarrollado un nuevo proceso sencillo para aislar grafeno altamente cristalino y transferirlo desde el sustrato de carburo de silicio (SiC) en el que se ha hecho crecer a cualquier otro sustrato, como un dieléctrico para aplicaciones de dispositivos electrónicos. Este nuevo método de transferencia ha sido demostrado experimentalmente, presentando un buen rendimiento y reproducibilidad. El método de delaminado y transferencia se basa en el uso de obleas de SiC dopadas, que son más económicas que las obleas de SiC semiaislantes que se requieren a menudo, y no utiliza productos químicos tóxicos agudos. Los investigadores buscan productores de grafeno o SiC y fabricantes de dispositivos con el fin de explotar el know-how mediante un acuerdo de licencia de patente.

Details

Tittle:
Low cost delamination process to isolate high quality graphene
Summary:
Spanish researchers have developed a novel, simple procedure to isolate highly crystalline graphene so that it can be transferred from its growth silicon carbide (SiC) substrate to arbitrarily another one, such as a dielectric for electronic device applications.
This novel transfer method has been experimentally proven, showing good performance and reproducibility.
Graphene or SiC producers and device makers are being sought to exploit the know-how through a patent license agreement.
Description:
Chemical Vapor deposition (CVD) graphene and Epitaxial Graphene on Silicon Carbide (EG-SiC) are the two preferred synthesis processes for the preparation of highly crystalline graphene.
Applications of CVD graphene often require sacrificial metal catalyst, e.g. by using a FeCl3 based solution, which is a very corrosive and environmental unfriendly chemical. Differently, EG-SiC presents a immediately readiness for electronic devices fabrication, although the use of SiC wafers as substrates makes it in principle expensive as compared to metal foils combined with silicon substrates.
In any case, the exfoliation and transfer of graphene from one substrate to another is a critical processing step. Its elusiveness as a robust process impedes that the graphene can be widely used in e.g. electronic devices, in different fields of application and, importantly, for industrialization or commercialization.
The developed delamination and transfer method relies on using doped SiC wafers, which are cheaper than often required semi-insulating SiC wafers, and does not employ acute toxic chemicals.
Advantages and Innovations:
Most relevant features are:
- Versatile and simple transfer. One-step procedure to isolate graphene.
- Easily scalable, fast and modular method. Potentially suitable for mass production.
- Preserving integrity of high quality graphene or its crystal domain/sheet size. No adhesives or mechanical traction by metal thin films are needed.
- Affordable and scalable synthesis. Use of EG grown on doped-SiC substrates.
- Environmentally friendly. Delamination in non-hazardous chemicals, reduction of sacrificial materials and possibility of SiC template recycling.
- SiC reusable after graphene exfoliation e.g. for regrowth.
Stage of Development:
Under development/lab tested
IPs:
Patent(s) applied for but not yet granted
CommeR Statunts Regarding IPR Status:
PCT patent application filed

Partner sought

Type and Role of Partner Sought:
Graphene or Silicon carbide (SiC) producers and device makers are being sought to work in collaboration for further developments, e.g. scalability, or to exploit the existing know-how through a patent license agreement.

Client

Type and Size of Client:
R&D Institution
Already Engaged in Trans-National Cooperation:
No
Languages Spoken:
English
German

Keywords

Technology Keywords:
02007022 Conductive materials
02007023 Materiales híbridos
02007012 Materiales ópticos
02007024 Nanomaterials