Con esta herramienta te facilitamos un acceso a todas las ofertas y demandas de tecnología europeas y a búsquedas de socios para participar en propuestas europeas de I+D publicadas en la red Enterprise Europe Network, pudiendo filtrar los resultados para facilitar las búsquedas más acordes con tus necesidades.

¿Quieres recibir estos listados de oportunidades de colaboración en tu correo de forma periódica y personalizada? Date de alta en nuestro Boletín

Para optimizar los resultados de la búsqueda, se recomienda utilizar términos en inglés.

Reconfigurable field-effect transistor for use in low power applications.

Resumen

Tipo:
Oferta Tecnológica
Referencia:
TOES20201216003
Publicado:
23/12/2020
Caducidad:
24/12/2021
Resumen:
Researchers from a Spanish University have developed a novel reconfigurable field-effect transistor (R-FET) that works in low power applications and can modulate the polarity at all times and obtain a high current for both polarities, thus solving the problems of low performance that characterize the usual R-FET transistors. The university is looking for partners interested in licensing the patented device.

Details

Tittle:
Reconfigurable field-effect transistor for use in low power applications.
Summary:
Researchers from a Spanish University have developed a novel reconfigurable field-effect transistor (R-FET) that works in low power applications and can modulate the polarity at all times and obtain a high current for both polarities, thus solving the problems of low performance that characterize the usual R-FET transistors. The university is looking for partners interested in licensing the patented device.
Description:
Metal Oxide Semiconductor Field-Effect Transistors (MOS FETs) are an essential part of almost any electronic component today. Currently, more than 90% of the consumer electronics manufactured uses CMOS (Complementary MOS) technology, which allows two complementary MOSFET transistors to be coupled simultaneously.

In recent years, the object of study has been focused on the development of reconfigurable transistors (R-FET, Reconfigurable FET). These stand out for combining both types of transistors (N, with electron charge carrier, and P, with hollow charge carrier) and allow the polarity (N or P) to be modulated at all times, thus reducing the number of necessary components. The modulation of polarity in this type of transistors has traditionally been achieved through the use of metal-semiconductor structures, called Schottky junctions. However, the low output current of these devices and their low performance make them unviable for low power applications.

Researchers from a Spanish University have developed a novel reconfigurable field-effect transistor (R-FET) that solves these problems. It uses doped regions of the N and P types as source and drain simultaneously, which allows solving the main limitations of traditional R-FET devices. The structure of the proposed device is based on dual doping in such a way that source and the drain present two differentiated portions for each type of doping (N and P). This dual configuration allows obtaining a high injection for both polarities without resorting to Schottky contact. The elimination of metal-semiconductor junctions in this device through the alternative of semiconductor-semiconductor junctions causes a substantial increase in the current obtained, from 30 to 2500 times according to conservative simulations. This technology provides an improvement in the performance of conventional R-FET devices, making them an option for low power applications.
The University is looking for partners from the industry working with semiconductor products, in order to reach a license agreement.

Advantages and Innovations:
- Performance improvement. The dual doped configuration for the source and the drain of this device allows to obtain a high injection for both polarities without having to resort to Schottky contacts, thus notably increasing the currents obtained.

- Simple manufacturing. The absence of metal-semiconductor junctions in source and drain avoids lateral metallization steps, thus simplifying the manufacturing process of these new devices.

- Less metallization variability. The absence of metal-semiconductor junctions eludes the use of exotic metals and the Fermi Level Pinning effect.

- Ease of current modulation N / P. The lithographic masks, which define the doping regions, can be arbitrarily set in both polarities to obtain any desired current ratio between polarities.

- Possibility of using traditional strategies to improve the mobility of carriers.

- Functional for low power applications. The double doping of the device allows higher current densities to be obtained than in habitual R-FET devices, making it feasible to use it for low power applications.
Stage of Development:
Under development/lab tested
IPs:
Patent(s) applied for but not yet granted
CommeR Statunts Regarding IPR Status:
Spanish patent applied and PCT pending

Partner sought

Type and Role of Partner Sought:
The University is looking for companies related to semiconductor products, in order to reach a license agreement.

Client

Type and Size of Client:
University
Already Engaged in Trans-National Cooperation:
No
Languages Spoken:
English
Spanish

Keywords

Technology Keywords:
01002012 Semiconductores